FilmTek 6000 PAR-SE
Highlights
FilmTek 6000 PAR-SE
The FilmTek™ 6000 PAR-SE advanced multimodal film metrology system provides production-proven monitoring of film thickness, refractive index, and stress measurement for a broad range of film layers at the 1x nm design node and beyond. This system enables tighter process control and increases device yield during the production of the latest generation ICs and supports the development of next-node technologies.
Manufacturing advanced IC devices at 1x nm requires the use of highly uniform complex films. Metrology tools that can monitor extremely thin films, often within multilayer film stacks (e.g., high-k and oxide-nitride-oxide films), enable manufacturers to maintain tight control over film building processes. Additionally, some processes, like multi-patterning, result in gradients through the thickness of the film that must be monitored for optimum device performance (e.g., implant damage and low-k films). Unfortunately, existing metrology tools that rely on conventional ellipsometry or reflectometry techniques are limited in their ability to detect film gradient changes for these applications.
To overcome these challenges, FilmTek 6000 PAR-SE combines spectroscopic ellipsometry and DUV multi-angle polarized reflectometry with a wide spectral range to meet the demands associated with multi-patterning and other leading-edge device fabrication techniques. Featuring our patented Multi-Angle Differential Polarimetry (MADP) and Differential Power Spectral Density (DPSD) technology, this system independently measures film thickness and index of refraction, significantly increasing its sensitivity to changes in films, particularly those within multilayer stacks. This combined approach is ideal for both the ultra-thin and thick multilayer film stacks used for complex device structures.
Eigenschaften
Measurement Capabilities
Enables simultaneous determination of:
- Multiple layer thicknesses
- Indices of refraction [ n(λ) ]
- Extinction (absorption) coefficients [ k(λ) ]
- Energy band gap [ Eg ]
- Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
- Surface roughness
- Constituent, void fraction
- Crystallinity/Amorphization (e.g., of Poly-Si or GeSbTe films)
- Film gradient
System Components
Standard:
- Spectroscopic ellipsometry with rotating compensator design (295 nm - 1700 nm)
- Multi-angle, polarized spectroscopic reflection (190 nm - 1700 nm)
- Measures film thickness and index of refraction independently
- Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology
- Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
- Patented parabolic mirror technology – small spot size measures within a 50×50 µm feature
- Cassette to cassette wafer handling
- Pattern recognition (Cognex)
- FOUP or SMIF compatible
- SECS/GEM
- 先进材料建模软件
- Bruker's generalized material model with advanced global optimization algorithms
Anwendungen
Typical Application Areas
Typical application areas include:
- Semiconductor IC devices
Spezifikationen
Technical Specifications
| 膜厚度Range | 0 Å to 150 µm |
|---|---|
| 膜厚度Accuracy | ±1.0 Å for NIST traceable standard oxide 100 Å to 1 µm |
| Spectral Range | 190 nm - 1700 nm (220 nm - 1000 nm is standard) |
| Measurement Spot Size | 50 µm |
| Sample Size | 2 mm - 300 mm (150 mm standard) |
| Spectral Resolution | 0.3 nm - 2nm |
| Light Source | Regulated deuterium-halogen lamp (2,000 hrs lifetime) |
| Detector Type | 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR) |
| Computer | Multi-core processor with Windows™ 10 Operating System |
| Measurement Time | ~2 sec per site (e.g., oxide film) |
Performance Specifications
| Film(s) | Thickness | Measured Parameters | Precision (1σ) |
|---|---|---|---|
| Oxide / Si | 0 - 1000 Å | t | 0.03 Å |
| 1000 - 500,000 Å | t | 0.005% | |
| 1000 Å | t , n | 0.2 Å / 0.0001 | |
| 15,000 Å | t , n | 0.5 Å / 0.0001 | |
| 150.000 Å | t , n | 1.5 Å / 0.00001 | |
| Nitride / Si | 200 - 10,000 Å | t | 0.02% |
| 500 - 10,000 Å | t , n | 0.05% / 0.0005 | |
| Photoresist / Si | 200 - 10,000 Å | t | 0.02% |
| 500 - 10,000 Å | t , n | 0.05% / 0.0002 | |
| Polysilicon / Oxide / Si | 200 - 10,000 Å | tPoly, tOxide | 0.2 Å / 0.1 Å |
| 500 - 10,000 Å | tPoly, tOxide | 0.2 Å / 0.0005 |