InSight CAP HP

Monitoring surface roughness of bare wafers and blanket films is critical for modern semiconductor device fabrication and emerging technologies such as back-end Hybrid Bonding for which slight deviations in surface roughness and topography can lead to defectivity and bonding failures.

The InSight CAP-HP is the industry’s fastest, highest resolution Automated AFM for bare/blanked wafer high volume metrology. At up to 20 WPH - 2nm x 2nm pixel size - fab hardened and designed for ease of use, the InSight CAP-HP enables the fastest time to data that can relied on for critical process decisions.

Defects on bare and unpatterned wafers are the hidden device killers. The defects are getting smaller and harder to find. At advanced design nodes, higher pattern density and smaller critical dimensions shrink the minimum size of a yield-killing defect on bare silicon wafers.
一旦未成形的晶片上的缺陷有蜜蜂n identified, the review system must accurately redetect those defects for review. The InSight CAP-HP supports edge + notch based global coarse alignment. As defects are re-detected, the coordinate system is refined dynamically to ensure rapid detection of all subsequent defects.

Depth metrology for Back End of Line process control is critical to ensure proper contact between metal layers to ensure the lower power and speed required of today’s semiconductor.

Bruker’s proprietary DTMode uses an adaptive, vectored scan algorithm for the fastest, most accurate depth metrology for high volume manufacturing. The high accuracy of DTMode is ensured by fact that all data points collected in DTMode are only those data points for which the system has achieved the setpoint condition.

Process control requires accuracy, precision and long-term reproducibility; CMP process control requires all of these while maintaining sensitivity to the sub nm topography of modern polishing technologies for Front, Mid, Back and Far-Back end of line.

The InSight CAP-HP’s picometer sensitivity ensures detection of post polish residual topography. With 0.3 nanometer, long term, probe-to-probe repeatability and reproducibility, this is data to trust for process control.

CMOS device performance is directly affected by carrier mobility, which is strongly influenced by sidewall surface roughness. The high field carrier mobility depends on surface scattering and hence surface roughness is a critical parameter to monitor

Bruker’s proprietary CDMode is the industry standard CD-AFM for sidewall metrology and CD reference metrology. CDMode critically uses a flared boot shape probe to ensure that there is only a single point of interaction between the probe and sidewall. If more than a single point of interaction occurs, such as with a tilt scanner the data does not accurately represent the sidewall morphology and roughness.

Our favorite high resolution selfie images created by todays ubiquitous CMOS Image Sensors (CIS) require high efficiency light collection and color filtering. To that end, the light collecting lenses continue to shrink while the shape of the lenses must focus the light though the color filters (CFA)

The InSight CAP HP has a dedicated CIS and CFA analysis designed for today’s CIS and CFA metrology requirements. For CIS, each lens is automatically identified and critical metrics are calculated and reported automatically.