By enabling collection of multidimensional data cube, extends the DataCube modePeakForce TUNAandPeakForce KPFM, and other functions.For materials scientists and engineers, it can break down barriers of the long-term efficiency and characterization.These new capabilities can take advantage of the high density data cube collection of nanoscale electronic and mechanical properties, before this can be achieved by a single measurement.
DataCube mode usingFASTForce VolumeTo user defined "dwell time" at each pixel execution - distance measurement.Within the residence time, with extremely high data acquisition rate of electrical measurement, which produce electrical and mechanical spectrum at each pixel.Typical force - distance measurement with 40 Hz, the residence time of each pixel is 100 milliseconds, can provide the complete characterization by single experiment, this is unique in the commercial AFM.At the same time presents the morphology, mechanical and multidimensional electrical information is no longer a time-consuming effort.Now, by the conventional AFM measurement can get such data.DataCube model can be used each time the compound data scanning, multi-dimensional data cube at the nanoscale.This support a series of powerful new pattern.
CAFM results affected by sampling the voltage applied, shows that material or devices can follow the influence of applied voltage and a major change in performance.Can DCUBE - TUNA in a single measurement of synchronous nano mechanical information to get a lot of sampling voltages and electrical conductivity, to build dense data cube sample information.This is the only can provide the sample conductivity comprehensive representation model, including conductive type (ohm, non-ohmic, schottky, etc.) and detailed information such as barrier height.
Scanning capacitance microscopy (SCM)Provides a direct measurement activity carrier concentration in nanoscale precision method.DCUBE - SCM can in a single measurement to a large number of sampling voltage synchronization for nano mechanics and carrier information.This technique provides a unique way to observe dC/dV the change of amplitude and phase dC/dV value and position of the deviation.By generating data cube, researchers can observe the oxide thickness and oxide charge, threshold voltage, flow ion pollution and interface trap density, etc. Additional information.
Piezoelectric response pressure (electricity) microscope (PFM)Is a kind of can in the nanoscale inverse piezoelectric effect of sample imaging technology.DCUBE - PFM can synchronize access to the nano mechanics information in the data cube and PFM amplitude/phase spectrum, and reveals a single data set each of the domain switching voltage.In addition, DCUBE - PFM overcame and traditionContact modeMethods related artifacts, damage to the sample, and the complexity of data analysis.
DCUBE piezoelectric response pressure (electricity) microscope combined with contact resonance, offers DCUBE - the advantages of PFM, moreover also includes slopes at each pixel with frequency, and provide the full spectrum and peak when the contact resonance sensitivity, etc.
Scan diffusion resistance microscope (the SSRM)For change of doped semiconductor majority carrier concentration in imaging.DCUBE - the SSRM can synchronization in a single measurement for nano mechanics information carrier density and 3 d imaging.The generated data cube can provide comprehensive characterization, including the nanoscale morphology, mechanics and logarithmic resistance spectrum information.In addition, I - V measurement can display conductivity for ohm, non-ohmic, schottky, or other types.
Scanning microwave impedance microscope (sMIM) imaging can be user defined sampling voltages, the impedance of the capacitance (C) and resistance (R) and dC/dV and dR/dV data imaging.Using DCUBE - sMIM, available in a single scan in all kinds of common characteristics under different sampling voltage - and immediately available "panorama".Spectrum also revealed other information, such as conductive type (ohm, non-ohmic, schottky, etc.), oxide thickness and oxide charge and flow of ions caused by pollution, and interface trap density.